CAP CER 3.3PF 100V C0G/NP0 1206
DIODE SCHOTTKY 60V 1A DO204AL
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 60 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 700 mV @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 500 µA @ 60 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PR2007G-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 2A DO15 |
|
GI812-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AC |
|
VS-31DQ06Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 3.3A C16 |
|
APD240VDTR-G1Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 2A DO41 |
|
1N5391GP-APMicro Commercial Components (MCC) |
DIODE GPP 1.5A DO-15 |
|
S1JLHMTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
UGS5J MNGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 5A TO263AB |
|
S4PDHM3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 4A TO277A |
|
UG12HT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 12A TO220AC |
|
B350A-13Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 50V 3A SMA |
|
S4PKHM3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 4A TO277A |
|
MBR0580L-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 80V 500MA SOD123 |
|
1N8031-GAGeneSiC Semiconductor |
DIODE SCHOTTKY 650V 1A TO276 |