DIODE GEN PURP 600V 4A DO214AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1.25 V @ 4 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Capacitance @ Vr, F: | 65pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RS1PDHE3/84AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO220AA |
|
CDBA220L-GComchip Technology |
DIODE SCHOTTKY 20V 2A DO214AC |
|
M4GRectron USA |
DIODE GLASS 1A 400V SMX |
|
SS115LHM2GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 1A SUB SMA |
|
GP02-35HE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 3.5KV 250MA DO204 |
|
FES8GTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A TO220AC |
|
STTH1212GSTMicroelectronics |
DIODE GEN PURP 1.2KV 12A D2PAK |
|
MBRH15030LGeneSiC Semiconductor |
DIODE SCHOTTKY 30V 150A D-67 |
|
ZHCS1006TCZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 60V 900MA SOT23-3 |
|
MUR160-APMicro Commercial Components (MCC) |
DIODE GPP SUPER FAST 1A DO-41 |
|
IDD12SG60CXTMA1IR (Infineon Technologies) |
DIODE SCHOTTKY 600V 12A TO252-3 |
|
1N4004RLSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 400V 1A DO41 |
|
VS-8TQ080GSTRRPBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 80V 8A TO263AB |