DIODE GEN PURP 1KV 80A TO247AC
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 80A |
Voltage - Forward (Vf) (Max) @ If: | 1.35 V @ 80 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 480 ns |
Current - Reverse Leakage @ Vr: | 100 µA @ 1000 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AC |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
JANTXV1N6622UMicrosemi |
DIODE GEN PURP 600V 1.2A A-MELF |
|
1N4148WLP-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 80V 100MA SOD882 |
|
MA2YD2800LPanasonic |
DIODE SCHOTTKY 30V 1.5A MINI2 |
|
VS-15ETX06STRLPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO263AB |
|
HER201G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 2A DO204AC |
|
10ETS08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 10A TO220AC |
|
SS23L MTGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 2A SUB SMA |
|
50WQ10FNTRRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 5.5A DPAK |
|
SK33E3/TR13Microsemi |
DIODE SCHOTTKY 30V 3A DO214AB |
|
ES2B-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 100V 2A SMB |
|
1N5620GPHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AC |
|
RS1JLHMTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 800MA SUBSMA |
|
1N5819 R1GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 1A DO204AL |