DIODE GEN PURP 100V 3A DO214AB
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.15 V @ 3 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5 µs |
Current - Reverse Leakage @ Vr: | 5 µA @ 100 V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SFAF808GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 8A ITO220AC |
|
SRP300A-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 3A DO201AD |
|
SFA802G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 8A TO220AC |
|
RGP20AHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 2A GP20 |
|
RS3GB-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 400V 3A SMB |
|
ES1DL MQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A SUB SMA |
|
SF18G R1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AL |
|
VS-MUR1520-N3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 15A TO220AB |
|
SS1P6L-E3/84AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 1A DO220AA |
|
1N4942GP-APMicro Commercial Components (MCC) |
DIODE GPP FAST 1A DO-41 |
|
FGP30CHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 3A DO204AC |
|
SRA1050 C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 10A TO220AC |
|
MBRM110ET3Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 10V 1A POWERMITE |