DIODE SCHOTTKY SILICON CARBIDE S
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 6 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 50 µA @ 650 V |
Capacitance @ Vr, F: | 150pF @ 5V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RS1J R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO214AC |
|
RS1ML RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800MA SUB SMA |
|
VS-SD1100C32CVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 3.2KV 1100A B-43 |
|
CLL4448 BK PBFREECentral Semiconductor |
DIODE GEN PURP 75V 250MA SOD80 |
|
1N4003GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
US2MASanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 1KV 1.5A DO214AC |
|
APT15D60KGRoving Networks / Microchip Technology |
DIODE GEN PURP 600V 15A TO220 |
|
FES16FTRochester Electronics |
RECTIFIER DIODE |
|
1N5404G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO201AD |
|
SDUR1560WSMC Diode Solutions |
DIODE GEN PURP 600V TO247AC |
|
U3C-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 2A DO214AB |
|
SCS315AMCROHM Semiconductor |
DIODES SILICON CARBIDE |
|
JPAD10 TO-92 2LLinear Integrated Systems, Inc. |
DIODE GEN PURP 35V 10MA TO92 |