CAP CER 6PF 50V C0G RADIAL
DIODE SCHOTTKY 100V 5A IPAK
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 5A |
Voltage - Forward (Vf) (Max) @ If: | 730 mV @ 5 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 3.5 µA @ 100 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Operating Temperature - Junction: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
BAT81S-TAPVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 30MA DO35 |
![]() |
FFPF08H60STUSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 8A TO220F-2L |
![]() |
BAT54HT1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOD323 |
![]() |
6A005-GComchip Technology |
DIODE GEN PURP 50V 6A R6 |
![]() |
UFS340JE3/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 3A DO214AB |
![]() |
1N5391GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1.5A DO204AC |
![]() |
RGL34BHE3/83Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 500MA DO213 |
![]() |
VS-1N1206RAVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
![]() |
S3KHR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO214AB |
![]() |
ES2G-M3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |
![]() |
SB5100E-GComchip Technology |
DIODE SCHOTTKY 100V 5A DO201AD |
![]() |
1N6479HE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
![]() |
NSR02100HT1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 200MA SOD323 |