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UGB8GT-E3/81

UGB8GT-E3/81

DIODE GEN PURP 400V 8A TO263AB

1N6481HE3/97

1N6481HE3/97

DIODE GEN PURP 400V 1A DO213AB

1N6481HE3/97

1N6481HE3/97

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Part No :

1N6481HE3/97

Manufacturer
Vishay General Semiconductor – Diodes Division
Description
DIODE GEN PURP 400V 1A DO213AB
Catalog
Diodes - Rectifiers - Single
Availability
697569 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 19 - Feb 23 2025
PDF
1N6481HE3/97 PDF
Type Description
Series:SUPERECTIFIER®
Package:Tape & Reel (TR)
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):-
Current - Reverse Leakage @ Vr:10 µA @ 400 V
Capacitance @ Vr, F:8pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AB, MELF (Glass)
Supplier Device Package:DO-213AB
Operating Temperature - Junction:-65°C ~ 175°C
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