DIODE SCHOTTKY 30V 1A POWERMITE
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 380 mV @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 410 µA @ 30 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | Powermite |
Operating Temperature - Junction: | -55°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FR156GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1.5A DO204AC |
|
RS2BHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1.5A DO214AA |
|
NTE6009NTE Electronics, Inc. |
R-400V 40A FAST REC AK |
|
GN3MSURGE |
3A -1000V - SMC (DO-214AB) - REC |
|
MUR2100ERochester Electronics |
RECTIFIER DIODE |
|
VS-T40HFL20S02Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 40A D-55 |
|
MURA230T3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 300V 2A SMA |
|
BYG22DHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2A DO214AC |
|
1N4936GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
MBRF10H100-E3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 10A ITO220AC |
|
SGL2-60-3GDiotec Semiconductor |
SCHOTTKY DO-213AA 60V 2A |
|
CDBJFSC101200-GComchip Technology |
DIODE SIC 10A 1200V TO-220F |
|
RURP1580Rochester Electronics |
RECTIFIER DIODE |