RES 30M OHM 2% 1/2W 2010
DIODE GEN PURP 800V 1A DO213AB
AA-SERIES DC TO HVDC CONVERTER,
SWITCH PUSHBUTTON W/IND
Type | Description |
---|---|
Series: | SUPERECTIFIER® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 10 µA @ 800 V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RGP02-14E-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.4KV 500MA DO204 |
|
SE20PAJHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1.6A DO220AA |
|
RS1MHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1A DO214AC |
|
RL206G-D1-3000 |
DIODE GEN PURP 800V 2A DO204AC |
|
RS1GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 400V 1A SMA |
|
MPG06GHE3_A/53Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A MPG06 |
|
FFPF30UA60SSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 30A TO220-2 |
|
SF2L8G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 2A DO204AC |
|
HVM15Rectron USA |
DIODE GEN PURP 15000V 350MA HVM |
|
S1B-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 100V 1A SMA |
|
GP08J-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 800MA DO204 |
|
NSF8KT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 8A ITO220AC |
|
VS-60EPU04-N3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |