RF SCHOTTKY BARRIER DIODE
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 2 V |
Current - Average Rectified (Io): | 50mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 320 mV @ 1 mA |
Speed: | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 10 µA @ 2 V |
Capacitance @ Vr, F: | 0.15pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | 2-XDFN |
Supplier Device Package: | 2-X2DFN (1x0.6) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
BAT54LT1Rochester Electronics |
DIODE SCHOTTKY 30V 200MA SOT23-3 |
![]() |
ES2FHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 2A DO214AA |
![]() |
UF4006Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 800V 1A DO204AL |
![]() |
MUR460-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 4A DO201AD |
![]() |
VS-12FLR60S02Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
![]() |
ESH2C-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 2A DO214AA |
![]() |
CUS10S40,H3FToshiba Electronic Devices and Storage Corporation |
DIODE SCHOTTKY 40V 1A USC |
![]() |
SS25S-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 2A DO214AC |
![]() |
UF1BHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO204AL |
![]() |
1SS120-90RX-ERochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |
![]() |
SL03-GS08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 1.1A DO219AB |
![]() |
STPSC8065DYSTMicroelectronics |
DIODE SCHOTTKY 650V 8A TO220AC |
![]() |
BAS116-7-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 85V 215MA SOT23-3 |