RES SMD 487 OHM 0.25% 1/10W 0603
CAP CER 4.7UF 35V JB 0603
DIODE GEN PURP 100V 4A DO201AD
RES 2.67M OHM 0.5% 1/2W 2512
Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 950 mV @ 4 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 30 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 100 V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RHRP1590Rochester Electronics |
RECTIFIER DIODE |
|
DSB5712Roving Networks / Microchip Technology |
DIODE SCHOTTKY 20V 75MA DO35 |
|
FFD08S60S-F085Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 8A TO252 |
|
IDW24G65C5BXKSA2Rochester Electronics |
IDW24G65C5B - COOLSIC SCHOTTKY D |
|
NTS12100EMFST1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 12A 5DFN |
|
R2000F-TRectron USA |
DIODE GEN PURP FAST 2KV 1A DO41 |
|
IDB23E60ATMA1Rochester Electronics |
IDB23E60 - FAST SWITCHING EMITTE |
|
B160-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 60V 1A SMA |
|
BAT721,215Nexperia |
DIODE SCHOTTKY 40V 200MA TO236AB |
|
SK33B R5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 3A DO214AA |
|
SS115L RVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 1A SUB SMA |
|
VS-25ETS10STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 25A TO263AB |
|
DLE30C-KC9Rochester Electronics |
RECTIFIER DIODE, 1.5A |