DIODE SCHOTTKY 100V 10A TO277A
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 880 mV @ 10 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 10 µA @ 100 V |
Capacitance @ Vr, F: | 270pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CUHS20F30,H3FToshiba Electronic Devices and Storage Corporation |
SCHOTTKY BARRIER DIODE, 30V/2A, |
|
BAS5202VH6327XTSA1IR (Infineon Technologies) |
DIODE SCHOTTKY 45V 750MA SC79-2 |
|
BAS40B5003Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
FFSB2065B-F085Sanyo Semiconductor/ON Semiconductor |
SIC DIODE 650V |
|
IDW30E65D1FKSA1IR (Infineon Technologies) |
DIODE GEN PURP 650V 60A TO247-3 |
|
S1DL RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A SUB SMA |
|
VS-MURB820TRRHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO263 |
|
V12PM45HM3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY TMBS 12A 45V SMPC |
|
MBR845Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
VS-6EWX06FNTRHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A D-PAK |
|
VB20100SG-E3/8WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20A 100V TO-263AB |
|
SSB44-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 4A 40V DO214AA |
|
CDBC340-GComchip Technology |
DIODE SCHOTTKY 40V 3A DO214AB |