Type | Description |
---|---|
Series: | CoolSiC™+ |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 5A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 5 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 200 µA @ 600 V |
Capacitance @ Vr, F: | 170pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | PG-TO220-2-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BAS85-M-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD80 |
|
SS3P4L-M3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 3A TO277A |
|
STTH15RQ06DYSTMicroelectronics |
DIODE GEN PURP 600V 15A TO220AC |
|
SB120SDiotec Semiconductor |
SCHOTTKY DO-41 20V 1A |
|
S5KBHR5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 5A DO214AA |
|
GSD2004WS-E3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 240V 225MA SOD323 |
|
BAT83S-TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 30MA DO35 |
|
VS-SD1500C04LVishay General Semiconductor – Diodes Division |
DIODE GP 400V 1600A DO200AB |
|
GPP10G-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
VS-8EWS10STR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 8A DPAK |
|
1N4937G-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 1A DO41 |
|
STTH3012DSTMicroelectronics |
DIODE GEN PURP 1.2KV 30A TO220AC |
|
PMEG2010EPASXRochester Electronics |
NOW NEXPERIA PMEG2010EPASX - REC |