PWR XFMR LAMINATED 175VA CHAS MT
DIODE GEN PURP 600V 2.9A TO277A
IC DELAY LINE 100PS 32SMT
DC DC CONVERTER 3.3V 1W
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, eSMP® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 2.9A |
Voltage - Forward (Vf) (Max) @ If: | 1.05 V @ 7 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.6 µs |
Current - Reverse Leakage @ Vr: | 20 µA @ 600 V |
Capacitance @ Vr, F: | 76pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
US1MHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1A DO214AC |
|
BYV27-050-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 55V 2A SOD57 |
|
VS-4ESH01-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 4A TO277A |
|
SS24S-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 2A DO214AC |
|
NXPSC06650D6JWeEn Semiconductors Co., Ltd |
DIODE SCHOTTKY 650V 6A DPAK |
|
BY133GPHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.3KV 1A DO204AC |
|
UGA15120HC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 15A TO220AC |
|
MBRF1635/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 16A ITO220AC |
|
HER508-FRectron USA |
DIODE HIGH EFF 1000V 5A DO-201 |
|
ES1JL RUGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
STPS3170AFNSTMicroelectronics |
170 V, 3 A POWER SCHOTTKY RECTIF |
|
AS4PKHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 2.4A TO277A |
|
BAV20,143Nexperia |
DIODE GEN PURP 150V 250MA ALF2 |