DIODE GEN PURP 600V 30A DO247
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 30A |
Voltage - Forward (Vf) (Max) @ If: | 3.6 V @ 30 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 50 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-247-2 (Straight Leads) |
Supplier Device Package: | DO-247 |
Operating Temperature - Junction: | -40°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SR110 R0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 1A DO204AL |
|
VSS8D2M10-M3/IVishay General Semiconductor – Diodes Division |
2A, 100V, SLIMSMAW TRENCH SKY RE |
|
SSL34A-F1-0000HF |
DIODE SCHOTTKY 40V 3A DO214AC |
|
HS1DFS M3GTSC (Taiwan Semiconductor) |
50NS, 1A, 200V, HIGH EFFICIENT R |
|
MR852GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD |
|
JANTXV1N5623USRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 1A D5A |
|
1N5811TRMicrosemi |
DIODE GEN PURP 150V 6A AXIAL |
|
V10P10HM3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 10A TO277A |
|
VS-40HF60Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 40A DO203AB |
|
FRL1GDiotec Semiconductor |
DIODE FR SOD-123FL 400V 1A |
|
STTH60R04WSTMicroelectronics |
DIODE GEN PURP 400V 60A DO247 |
|
MUR105SHR5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A DO214AA |
|
HS2BA R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1.5A DO214AC |