SIC SCHOTTKY 1200V 30A TO247-2
Type | Description |
---|---|
Series: | CoolSiC™+ |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 87A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.65 V @ 30 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 248 µA @ 1200 V |
Capacitance @ Vr, F: | 1980pF @ 1V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | PG-TO247-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VSSAF5L45-M3/6BVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 3A DO221AC |
|
NRVS3DBSanyo Semiconductor/ON Semiconductor |
SR SMB GPPN 3A 200V |
|
SF13G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 1A DO204AL |
|
US1MHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO214AC |
|
CD1408-R1800J.W. Miller / Bourns |
DIODE GEN PURP 800V 1A 1408 |
|
UF1BHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO204AL |
|
H2MF-F1-0000HF |
DIODE GEN PURP 1000V 2A SMAF |
|
SB890Diotec Semiconductor |
SCHOTTKY D5.4X7.5 90V 8A |
|
1N5818 R0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A DO204AL |
|
S2M-E3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1.5A DO214 |
|
HS1G-F1-0000HF |
DIODE GEN PURP 400V 1A DO214AC |
|
MURS320TRSMC Diode Solutions |
DIODE GEN PURP 200V 3A SMC |
|
SS14A-F1-0000HF |
DIODE SCHOTTKY 40V 1A DO214AC |