RES 412 OHM 1/2W .1% AXIAL
DIODE GEN PURP 600V 1A DO204AC
RF SHIELD 1.5" X 6" THROUGH HOLE
FIXED INDUCTOR
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.25 V @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | 27pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AC, DO-15, Axial |
Supplier Device Package: | DO-204AC (DO-15) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SB160-TZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 60V 1A DO41 |
|
RB050L-40TE25ROHM Semiconductor |
DIODE SCHOTTKY 40V 3A PMDS |
|
VS-16EDH02HM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 16A TO263AC |
|
V3FM12-M3/IVishay General Semiconductor – Diodes Division |
3A,120V,SMF,TRENCH SKY RECT. |
|
VS-4EWH02FNTRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 4A D-PAK |
|
APT15D60BGRoving Networks / Microchip Technology |
DIODE GEN PURP 600V 15A TO247 |
|
BAS21LSYLNexperia |
BAS21LS/SOD882BD/XSON2 |
|
SS320-HFComchip Technology |
DIODE SCHOTTKY 200V 3A DO214AC S |
|
CDBF0540-HFComchip Technology |
DIODE SCHOTTKY 40V 500MA 1005 |
|
MUR120-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 200V 1A DO41 |
|
S1FLB-GS08Vishay General Semiconductor – Diodes Division |
DIODE GP 100V 700MA DO219AB |
|
S215FASanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 150V 2A SOD123FA |
|
SF27GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 2A DO204AC |