DIODE GP 1.2KV 350A BG-PB50ND-1
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 350A |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 30 mA @ 1200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | BG-PB50ND-1 |
Operating Temperature - Junction: | -40°C ~ 135°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CMR1U-10 TR13 PBFREECentral Semiconductor |
DIODE GEN PURP 1KV 1A SMB |
|
RB088LAM-60TFTRROHM Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
|
RS3A-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 50V 3A SMC |
|
VS-1N3768Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 35A DO203AB |
|
CMSH2-20 TR13 PBFREECentral Semiconductor |
DIODE SCHOTTKY 20V 2A SMB |
|
1N482BRoving Networks / Microchip Technology |
DIODE GEN PURP 30V 200MA DO35 |
|
VS-86HFR80Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 8A DO203AB |
|
NSB8MTHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 8A TO263AB |
|
S5A-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE GPP 5A 50V DO-214AB |
|
VS-6FR20MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 6A DO203AA |
|
NRVS3MBSanyo Semiconductor/ON Semiconductor |
SR SMB GPPN 3A 1000V |
|
FDH300_QRochester Electronics |
DIODE 125V 0.2A 2-PIN DO-35 T/R |
|
MUR550APFRLRochester Electronics |
RECTIFIER DIODE |