DIODE SCHOTTKY 30V 1A DO213AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 500 mV @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 500 µA @ 30 V |
Capacitance @ Vr, F: | 110pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF |
Supplier Device Package: | GL41 (DO-213AB) |
Operating Temperature - Junction: | -55°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
S1PJHM3J/84AVishay General Semiconductor – Diodes Division |
DIODE GPP 1A 600V DO-220AA |
|
1N5406-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
|
G1M-F1-3000HF |
DIODE GEN PURP 1000V 1A SOD123FL |
|
BYM11-100-E3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
|
MBR1035Rochester Electronics |
RECTIFIER DIODE |
|
SD091SB150A.TSMC Diode Solutions |
PIV 150V IO 7.5A CHIP SIZE 90MIL |
|
BAV99W/MI115Rochester Electronics |
RECTIFIER DIODE |
|
S1GT-04LC-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 400V 1A SMB |
|
LSIC2SD065D16AWickmann / Littelfuse |
DIODE SCHOTTKY SIC 650V 16A |
|
EGP30FRochester Electronics |
RECTIFIER DIODE, 3A, 300V, DO-20 |
|
ES3HB M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 500V 3A DO214AA |
|
AS1PDHM3/84AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A DO220 |
|
P1000D-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |