DIODE GEN PURP 600V 15.9A TO220
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 15.9A |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 4 µs |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Isolated Tab |
Supplier Device Package: | TO-220AB-L |
Operating Temperature - Junction: | -40°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HSM825JE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 25V 8A DO214AB |
|
1N4725Roving Networks / Microchip Technology |
DIODE GEN PURP 1KV 3A AXIAL |
|
APT100D60B2GRoving Networks / Microchip Technology |
FRED D 600 V 100 A TO-247 MAX |
|
STPSC2H065B-TRSTMicroelectronics |
650 V, 2 A HIGH SURGE SILICON CA |
|
FFH50US60S-F085Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 50A TO247-2 |
|
STTH30R04DSTMicroelectronics |
DIODE GEN PURP 400V 30A TO220AC |
|
SS13L R3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 1A SUB SMA |
|
SB3H90-E3/73Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 3A DO201AD |
|
SBR10A45SP5-13Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 45V 10A POWERDI5 |
|
SR503 R0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 5A DO201AD |
|
SM5060-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
1SS119TA-ERochester Electronics |
DIODE FOR HIGH SPEED SWITCHING |
|
FESB16DTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 16A TO263AB |