DIODE SCHOTTKY 30V 60A DO203AB
516 SERIES RACK & PANEL CONNECTO
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30 V |
Current - Average Rectified (Io): | 60A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 480 mV @ 60 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 mA @ 30 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-203AB (DO-5) |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SBT150-10JRochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
STPS2H100ASTMicroelectronics |
DIODE SCHOTTKY 100V 2A SMA |
|
RB068L-60DDTE25ROHM Semiconductor |
DIODE SCHOTTKY 60V 2A PMDS |
|
VSSB310-E3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 1.9A DO214AA |
|
VS-20TQ040SHM3Vishay General Semiconductor – Diodes Division |
SCHOTTKY - D2PAK |
|
VS-6ESU06HM3/86AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 6A TO277A |
|
TPUH6J S1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 6A TO277A |
|
SE20PB-M3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1.6A DO220AA |
|
FESB16AT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 16A TO263AB |
|
BYT53B-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 100V 1.9A SOD57 |
|
1N5404GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
|
S12JC R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 12A DO214AB |
|
JANTX1N4938-1Roving Networks / Microchip Technology |
DIODE GEN PURP 175V 100MA DO35 |