CAP CER 1206 27NF 16V ULTRA STAB
DIODE GEN PURP 4.8KV 1800A
M83513/12-H01CP = MCKS-C2-S-100P
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 4800 V |
Current - Average Rectified (Io): | 1800A |
Voltage - Forward (Vf) (Max) @ If: | 1.32 V @ 1500 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 100 mA @ 4800 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis Mount |
Package / Case: | DO-200AC, K-PUK |
Supplier Device Package: | - |
Operating Temperature - Junction: | -40°C ~ 160°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STTH2L06ASTMicroelectronics |
DIODE GEN PURP 600V 2A SMA |
|
MBR1645-E3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 16A TO220AC |
|
1N5399G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1.5A DO204AC |
|
NSR0320MW2T3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 20V 1A SOD323 |
|
BAS16WT-F2-0000HF |
DIODE GEN PURP 100V 150MA SOT323 |
|
HS2K M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 2A DO214AA |
|
RS3K-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 800V 3A SMC |
|
SK310B R5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 3A DO214AA |
|
TPMR10G S1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 10A TO277A |
|
SK55BHM4GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 5A DO214AA |
|
STTH3L06STMicroelectronics |
DIODE GEN PURP 600V 3A DO201AD |
|
S3MSMBDiotec Semiconductor |
DIODE STD SMB 1000V 3A |
|
SBR160S23-7Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 60V 900MA SOT23-3 |