DIODE SCHOTTKY 1.2KV 10A TO220-2
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 10 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 400 µA @ 1200 V |
Capacitance @ Vr, F: | 41pF @ 600V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SF1608G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 16A TO220AB |
|
BAS16LT3Rochester Electronics |
RECTIFIER DIODE |
|
SR115 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 1A DO204AL |
|
S1JHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
|
MBR1660SMC Diode Solutions |
DIODE SCHOTTKY 60V TO220AC |
|
V3FL45HM3/HVishay General Semiconductor – Diodes Division |
3A,45V,SMF,TRENCH SKY RECT. |
|
M7F-F1-3000HF |
DIODE GEN PURP 1000V 1A SMAF |
|
ES2FA R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 2A DO214AC |
|
FERD2045SB-TRSTMicroelectronics |
DIODE GEN PURP 45V 20A DPAK |
|
BAT43WS-E3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD323 |
|
MURH7020GeneSiC Semiconductor |
DIODE GEN PURP 200V 70A D-67 |
|
ES1G-LTPMicro Commercial Components (MCC) |
DIODE GEN PURP 400V 1A DO214AC |
|
S2KHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1.5A DO214AA |