DIODE AVALANCHE 400V 2.1A TO277A
IC NVSRAM 16MBIT PAR 48TSOP I
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, eSMP® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 2.1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.2 µs |
Current - Reverse Leakage @ Vr: | 10 µA @ 400 V |
Capacitance @ Vr, F: | 37pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TPAR3G S1GTSC (Taiwan Semiconductor) |
DIODE AVALANCHE 400V 3A TO277A |
|
VBT1045BP-M3/8WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 10A 45V TO-263AB |
|
HS2JAL M3GTSC (Taiwan Semiconductor) |
75NS, 2A, 600V, HIGH EFFICIENT R |
|
ACGRKM4007-HFComchip Technology |
DIODE GEN PURP 1KV 1A SOD123F |
|
1N5408GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 3A DO201AD |
|
VS-1EQH01-M3/HVishay General Semiconductor – Diodes Division |
ULTRAFAST RECTIFIER 1A DO-219AD |
|
RFN3BM6SFHTLROHM Semiconductor |
SUPER FAST RECOVERY DIODE (CORRE |
|
NUR460/L02,112Rochester Electronics |
RECTIFIER DIODE |
|
SE12DD-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3.2A TO263AC |
|
VS-70HF40Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 70A DO203AB |
|
V8P45-M3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 4.3A TO277A |
|
S1DLHRQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A SUB SMA |
|
1N1199AGeneSiC Semiconductor |
DIODE GEN PURP 50V 12A DO4 |