DIODE GEN PURP 600V 60A TO247AC
Type | Description |
---|---|
Series: | DUR |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 60A |
Voltage - Forward (Vf) (Max) @ If: | 2 V @ 60 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 100 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247AC |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
S1GB M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO214AA |
|
AES1B-HFComchip Technology |
AUTOMOTIVE RECTIFIER SUPER FAST |
|
SR115 R0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 1A DO204AL |
|
UF1KHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A DO204AL |
|
SS16LWHRVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 1A SOD123W |
|
V15PM12-M3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 120V 15A TO277A |
|
S1KALHM3GTSC (Taiwan Semiconductor) |
1A, 800V, STANDARD RECOVERY RECT |
|
RFN2L6STE25ROHM Semiconductor |
DIODE GEN PURP 600V 1.5A PMDS |
|
SBR6045Roving Networks / Microchip Technology |
DIODE SCHOTTKY 60A 45V DO5 |
|
SFS1604GHMNGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 16A TO263AB |
|
VS-ETU3006STRLHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 30A TO263AB |
|
VS-1N2138RAVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 60A DO203AB |
|
S15MCHV7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1KV 15A DO214AB |