







MEMS OSC XO 6.0000MHZ LVCM LVTTL
DIODE SCHOTTKY 100V 12A TO277A
MOSFET N-CH 600V 90A TO264
CAP TRIMMER 0.8-11PF 750V
| Type | Description |
|---|---|
| Series: | eSMP®, TMBS® |
| Package: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 100 V |
| Current - Average Rectified (Io): | 12A |
| Voltage - Forward (Vf) (Max) @ If: | 750 mV @ 12 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 200 µA @ 100 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-277, 3-PowerDFN |
| Supplier Device Package: | TO-277A (SMPC) |
| Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
RS1JL RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 800MA SUBSMA |
|
|
VS-25F10MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 25A DO203AA |
|
|
40HF60Solid State Inc. |
REC 40AMP 600V DO5 |
|
|
BAV19WS-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 250MA SOD323 |
|
|
JAN1N645-1Roving Networks / Microchip Technology |
DIODE GEN PURP 225V 400MA DO35 |
|
|
VS-ETU1506-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO220-2 |
|
|
VS-18TQ035STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 18A D2PAK |
|
|
VS-71HF100Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 70A DO203AB |
|
|
1N5391-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1.5A DO204AL |
|
|
RB051L-40TE25ROHM Semiconductor |
DIODE SCHOTTKY 20V 3A PMDS |
|
|
STPSC4H065DLFSTMicroelectronics |
SILICON CARBIDE DIODES |
|
|
VS-60APF04-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |
|
|
CDBFR40Comchip Technology |
DIODE SCHOTTKY 40V 200MA 1005 |