







MEMS OSC XO 19.2000MHZ LVCMOS LV
DIODES - D-PAK-E3
| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q101 |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 1200 V |
| Current - Average Rectified (Io): | 8A |
| Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 8 A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 50 µA @ 1200 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-PAK (TO-252AA) |
| Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
MUR440HA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 4A DO201AD |
|
|
STD10100TRSMC Diode Solutions |
DIODE SCHOTTKY 100V DPAK |
|
|
123NQ100-1SMC Diode Solutions |
DIODE SCHOTTKY 100V 120A PRM1-1 |
|
|
FR1BTASMC Diode Solutions |
DIODE GEN PURP 100V 1A SMB |
|
|
1SS286-ERochester Electronics |
RECTIFIER DIODE |
|
|
ES1B-M3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
|
|
RS2G R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 2A DO214AA |
|
|
M1MA142KT1Rochester Electronics |
DIODE GEN PURP 80V 100MA SC70-3 |
|
|
S1J M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO214AC |
|
|
MUR415RLGSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 150V 4A DO201AD |
|
|
S4PG-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 4A TO277A |
|
|
SMD24PL-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 40V 2A SOD123FL |
|
|
BYV29B-300HE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 8A TO263AB |