DIODE GEN PURP 200V 4A DO201AD
1.5A INDUCTOR BUILT-IN STEP-DOWN
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 4 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 200 V |
Capacitance @ Vr, F: | 100pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
1N647-1Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 400MA DO35 |
![]() |
MUR440S V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 4A DO214AB |
![]() |
BY550-200-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
![]() |
LL4148-TRectron USA |
DIODE GEN PURP 100V 200MA LL34 |
![]() |
NTE5820NTE Electronics, Inc. |
R-400 PRV 12A CATH CASE |
![]() |
SK320BHM4GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 3A DO214AA |
![]() |
RB055LAM-60TFTRROHM Semiconductor |
DIODE SCHOTTKY 60V 3A PMDTM |
![]() |
VS-8EWS16STR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 8A D-PAK |
![]() |
VS-E5TX0812-M3Vishay General Semiconductor – Diodes Division |
8A, 1200V, "X" SERIES FRED PT IN |
![]() |
UGF10J C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 10A ITO220AC |
![]() |
VS-8ETU04HN3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 8A TO220AC |
![]() |
BAS2103WE6327HTSA1IR (Infineon Technologies) |
DIODE GEN PURP 200V 250MA SOD323 |
![]() |
STTH1R04RLSTMicroelectronics |
DIODE GEN PURP 400V 1A DO41 |