CAP CER 0805 10NF 50V X7R 5%
DIODE SCHOTTKY 200V 10A TO277B
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 880 mV @ 10 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 100 µA @ 200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277B |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CDBA1100LR-HFComchip Technology |
DIODE SCHOTTKY 100V 1A DO214AC |
|
VSS8D2M6-M3/IVishay General Semiconductor – Diodes Division |
2A, 60V, SLIMSMAW TRENCH SKY REC |
|
BYV28-200-RAS15-10Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 3.5A SOD64 |
|
SK315BHM4GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 3A DO214AA |
|
U2C-E3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 2A DO214AA |
|
UF1GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO204AL |
|
SCS304AMCROHM Semiconductor |
DIODES SILICON CARBIDE |
|
AU3PG-M3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.7A TO277A |
|
RS1D M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AC |
|
SK36A-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 60V 3A DO214AC |
|
MUR210GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 2A AXIAL |
|
JANTX1N3595-1Roving Networks / Microchip Technology |
DIODE GEN PURP 125V 150MA DO35 |
|
IDH05SG60CXKSA1Rochester Electronics |
RECTIFIER DIODE |