3A -40V - SMA (DO-214AC) - RECTI
Type | Description |
---|---|
Series: | - |
Package: | Bag |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 420 mV @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 50 µA @ 40 V |
Capacitance @ Vr, F: | 285pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N4937E-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
RB160M-60TRROHM Semiconductor |
DIODE SCHOTTKY 60V 1A PMDU |
|
MBRH24030RGeneSiC Semiconductor |
DIODE SCHOTTKY 30V 240A D67 |
|
UES1104Roving Networks / Microchip Technology |
DIODE GEN PURP 200V 1A AXIAL |
|
MA2C029TAFPanasonic |
DIODE GEN PURP 6V 70MA DO34 |
|
FESB8JT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
|
1N5312Solid State Inc. |
FED 3.9 MA DO35 |
|
VS-12FR60MVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
|
ISL9R1560G2Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 15A TO247-2 |
|
TST30L60CW C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 15A TO220AB |
|
S1DHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
JANTX1N5811Roving Networks / Microchip Technology |
DIODE GEN PURP 150V 3A AXIAL |
|
VS-15EWH06FNTRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A D-PAK |