DIODE GEN PURP 800V 1A DO213AB
Type | Description |
---|---|
Series: | SUPERECTIFIER® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 500 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 800 V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AB, MELF (Glass) |
Supplier Device Package: | DO-213AB |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-10ETS12SLHM3Vishay General Semiconductor – Diodes Division |
DIODES - D2PAK-E3 |
|
1N5617GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AC |
|
RFV5BGE6STLROHM Semiconductor |
SUPER FAST RECOVERY DIODE - RFV5 |
|
HER305G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO201AD |
|
BYC5X-600,127Rochester Electronics |
NOW WEEN - BYC5X-600 - HYPERFAST |
|
GP3D012A065ASemiQ |
SIC SCHOTTKY DIODE 650V TO220 |
|
VS-305URA200Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2KV 300A DO9 |
|
ES2G/1Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 2A DO214AA |
|
SS34-M3/57TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 3A 40V DO-214AB |
|
LSIC2SD120A20Wickmann / Littelfuse |
DIODE SIC SCHOTTKY 1200V 20A |
|
BYG10D-E3/TR3Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A |
|
NRVUD340T4G-VF01Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 400V 3A DPAK |
|
BYW29-200GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 8A TO220-2 |