Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 15A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.75 V @ 12 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 200 µA @ 650 V |
Capacitance @ Vr, F: | 665pF @ 1V, 100kHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2L |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RB521CS-30T2RROHM Semiconductor |
DIODE SCHOTTKY 30V 100MA VMN2 |
|
V10PM10HM3/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 10A TO277A |
|
CGRC304-GComchip Technology |
DIODE GEN PURP 400V 3A DO214AB |
|
SR305HR0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 3A DO201AD |
|
FFSD0665ARochester Electronics |
SIC DIODE - 650V, 6A, UPAK |
|
SS12L RTGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 1A SUB SMA |
|
SB380Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 80V 3A DO201AD |
|
DSAI17-18AWickmann / Littelfuse |
DIODE AVALANCHE 1.8KV 25A DO203 |
|
1N5406GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
|
BAS16E6327HTSA1IR (Infineon Technologies) |
DIODE GEN PURP 80V 250MA SOT23-3 |
|
S5B-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE GPP 5A 100V DO-214AB |
|
CMOD6263 TR PBFREECentral Semiconductor |
DIODE SCHOTTKY 70V 15MA SOD523 |
|
APT15DQ100KGRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 15A TO220 |