POWER DIODE DISCRETES-FRED TO-26
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 15A |
Voltage - Forward (Vf) (Max) @ If: | 2.54 V @ 15 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 25 ns |
Current - Reverse Leakage @ Vr: | 100 µA @ 600 V |
Capacitance @ Vr, F: | 12pF @ 400V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STPSC10H12B-TR1STMicroelectronics |
DIODE SCHOTTKY 1.2KV 10A DPAK |
|
RBR5L40ATE25ROHM Semiconductor |
DIODE SCHOTTKY 40V 5A PMDS |
|
CTLHR10-06 TR13 PBFREECentral Semiconductor |
DIODE GEN PURP 600V 10A TLM364 |
|
1N5404-GComchip Technology |
DIODE GEN PURP 400V 3A DO201AD |
|
CDSU4148Comchip Technology |
DIODE GEN PURP 75V 150MA 0603 |
|
VS-SD203N25S20PCVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2.5KV 200A DO205 |
|
SBR8E45P5-13DZetex Semiconductors (Diodes Inc.) |
DIODE RECT SBR 45V 5A POWERDI5 |
|
1N5616Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 1A AXIAL |
|
NRVA4007T3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 1000V 1A SMA |
|
DB2G43200L1Panasonic |
CSP SCHOTTKY BARRIER DIODE |
|
SK12PMDiotec Semiconductor |
SCHOTTKY DO-216AA 20V 1A |
|
SFF2006G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 20A ITO220AB |
|
SE10DG-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A TO263AC |