DIODE GEN PURP 600V 4A DO201AD
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1.28 V @ 4 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Capacitance @ Vr, F: | 65pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTE5871NTE Electronics, Inc. |
R-50PRV 12A ANODE CASE |
|
SS23Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 2A DO214AA |
|
SE15FJ-M3/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1.5A DO219AB |
|
ISL9R860PF2Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 8A TO220F-2L |
|
VS-2EGH01-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 2A DO214AA |
|
1S40-TRectron USA |
DIODE SCHOKKTY 40V 1A R-1 |
|
MUH1PDHM3/89AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A MICROSMP |
|
VS-10ETF04STRL-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 10A D2PAK |
|
UFT800DDiotec Semiconductor |
DIODE UFR TO-220AC 200V 8A |
|
SE30PAGHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A DO221BC |
|
R1800Rectron USA |
DIODE GEN PURP 1800V 1A DO41 |
|
STTH30L06WYSTMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
|
VFT2045BP-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 20A ITO220AC |