DIODE GEN PURP 125V 200MA DO35
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 125 V |
Current - Average Rectified (Io): | 200mA (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 200 mA |
Speed: | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): | 3 µs |
Current - Reverse Leakage @ Vr: | 1 nA @ 125 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RB088LAM-40TRROHM Semiconductor |
SUPER LOW IR, 40V, 5A, SOD-128, |
|
SFM18PL-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 600V 1A SOD123FL |
|
EGP20GRochester Electronics |
RECTIFIER DIODE, 2A, 400V, DO-15 |
|
VS-20TQ035S-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 20A TO263AB |
|
TST10H120CW C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 120V 5A TO220AB |
|
HS3B V7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 3A DO214AB |
|
RURDG1560Rochester Electronics |
ULTRAFAST DIODE |
|
NTE5912NTE Electronics, Inc. |
R-50PRV 20A CATH CASE |
|
NSR10F40NXT5GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 40V 1A 2DSN |
|
VS-10TQ035-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 10A TO-220AC |
|
V3F6HM3/IVishay General Semiconductor – Diodes Division |
3A,60V,SMF,TRENCH SKY RECT. |
|
SS110LHM2GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 1A SUB SMA |
|
LS103C-GS18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 15A SOD80 |