DIODE GEN PURP 1000V 8A DO214AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 µA @ 1000 V |
Capacitance @ Vr, F: | 55pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BAS116LT1Rochester Electronics |
DIODE GEN PURP 75V 200MA SOT23-3 |
|
TST30H200CW C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 15A TO220AB |
|
MA27E0200LPanasonic |
DIODE SCHOTTKY 20V 35MA SSSMINI2 |
|
SE20FD-M3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1.7A DO219AB |
|
SS25-M3/52TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 2A 50V DO-214AA |
|
JAN1N5623USRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 1A D5A |
|
VS-ETL1506STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO263AB |
|
RB520CS-30T2RROHM Semiconductor |
DIODE SCHOTTKY 30V 100MA VMN2 |
|
1N4005-E3/53Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
RB160L-60TE25ROHM Semiconductor |
DIODE SCHOTTKY 60V 1A PMDS |
|
S1MB R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1000V 1A DO214AA |
|
10ETF04Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 10A TO220AC |
|
BAL99-7Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 75V 300MA SOT23-3 |