Type | Description |
---|---|
Series: | - |
Package: | Bag |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 150A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 200 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 mA @ 1000 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Stud Mount |
Package / Case: | DO-203AA, DO-8, Stud |
Supplier Device Package: | DO-8 |
Operating Temperature - Junction: | -65°C ~ 190°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BYG10D-M3/TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.5A |
|
BAS40LP-7Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 200MA 2DFN |
|
CFRA102-GComchip Technology |
DIODE GEN PURP 100V 1A DO214AC |
|
SDURF1560SMC Diode Solutions |
DIODE GEN PURP 600V 15A ITO220AC |
|
S3KB R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO214AA |
|
STPS5H100AFYSTMicroelectronics |
DIODE SCHOTTKY 100V 5A SOD128 |
|
VSB1545-M3/54Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 15A P600 |
|
VS-300U60AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 300A DO205AB |
|
BA159G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1A DO204AL |
|
PMEG2010EPA,115Nexperia |
DIODE SCHOTTKY 20V 1A 3HUSON |
|
FESB8DT-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO263AB |
|
SB02-09C-TB-ESanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 90V 200MA 3CP |
|
VS-400U80DVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 400A DO205AB |