DIODE SCHOTTKY 150V 1A DO214AC
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 150 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 900 mV @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 100 µA @ 150 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SMMBD301LT3GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOT23-3 |
|
DSEI12-06AWickmann / Littelfuse |
DIODE GEN PURP 600V 14A TO220AC |
|
KT20A120Diotec Semiconductor |
DIODE FR TO-220AC 120V 20A |
|
1N6640USRoving Networks / Microchip Technology |
DIODE GEN PURP 75V 300MA D5D |
|
VB20150SG-E3/8WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 150V 20A TO263AB |
|
AR4PJ-M3/86AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 2A TO277A |
|
US1KHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO214AC |
|
BYM11-200HE3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
|
S15KC M6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 15A DO214AB |
|
S5M-M3/57TVishay General Semiconductor – Diodes Division |
DIODE GPP 5A 1000V DO-214AB |
|
GROMASURGE |
1.5A -1000V - SMA (DO-214AC) - R |
|
1N4007GPE-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL |
|
1N3612GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |