Type | Description |
---|---|
Series: | eSMP® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 20 V |
Current - Average Rectified (Io): | 1.1A |
Voltage - Forward (Vf) (Max) @ If: | 420 mV @ 1.1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 10 ns |
Current - Reverse Leakage @ Vr: | 250 µA @ 20 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | DO-219AB (SMF) |
Operating Temperature - Junction: | 125°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SD103BWS-G3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 350MA 30V SOD323 |
|
FERD20H100STSSTMicroelectronics |
DIODE RECT 100V 20A TO220AB |
|
F1200ADiotec Semiconductor |
DIODE FR D8X7.5 50V 12A |
|
VS-16FR80Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 16A DO203AA |
|
1SS193-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 80V 100MA SOT23 |
|
VS-1N3624RVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 700V 12A DO203AA |
|
BA159G R1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1A DO204AL |
|
BA158Diotec Semiconductor |
DIODE FR DO-41 600V 1A |
|
HS2MA-F1-0000HF |
DIODE GEN PURP 1000V 2A DO214AC |
|
SF808G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 8A TO220AB |
|
SURS8220T3G-IR01Sanyo Semiconductor/ON Semiconductor |
DIODE GP ULT FAST 200V 2A SMB |
|
DB3J313K0LPanasonic |
DIODE SCHOTTKY 30V 200MA SMINI3 |
|
RBR1LAM40ATFTRROHM Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |