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TPAR3D S1G

TPAR3D S1G

DIODE AVALANCHE 200V 3A TO277A

TPAR3D S1G

TPAR3D S1G

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Part No :

TPAR3D S1G

Manufacturer
TSC (Taiwan Semiconductor)
Description
DIODE AVALANCHE 200V 3A TO277A
Catalog
Diodes - Rectifiers - Single
Availability
16000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 25 - Mar 01 2025
PDF
TPAR3D S1G PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Diode Type:Avalanche
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.55 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):120 ns
Current - Reverse Leakage @ Vr:10 µA @ 200 V
Capacitance @ Vr, F:58pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-277, 3-PowerDFN
Supplier Device Package:TO-277A (SMPC)
Operating Temperature - Junction:-55°C ~ 175°C
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