RES 14.9K OHM 1/10W .1% AXIAL
TVS DIODE 58V 93.6V DO214AA
DIODE GEN PURP 800V 2A DO204AC
RF SHIELD 24" THROUGH HOLE
Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 800 V |
Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AC, DO-15, Axial |
Supplier Device Package: | DO-204AC (DO-15) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NTE558NTE Electronics, Inc. |
R-SI 1500V 1A |
|
SF38GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO201AD |
|
UHF8JT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A ITO220AC |
|
VS-ETU1506FP-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 15A TO220FP |
|
1N4151W-G3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 150MA SOD123 |
|
VS-25F120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 25A DO203AA |
|
HER103G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO204AL |
|
V15P10HM3/IVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 15A TO277A |
|
VS-300U40AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 300A DO205AB |
|
BAS19-E3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 200MA SOT23 |
|
ES2D R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO214AA |
|
P600K-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
SF45GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 4A DO201AD |