DIODE SCHTKY 20V 200MA DSN0603B2
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 20 V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 375 mV @ 200 mA |
Speed: | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): | 1.9 ns |
Current - Reverse Leakage @ Vr: | 45 µA @ 20 V |
Capacitance @ Vr, F: | 25pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | 0201 (0603 Metric) |
Supplier Device Package: | DSN0603B-2 |
Operating Temperature - Junction: | 125°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BAS316ZNexperia |
DIODE GEN PURP 100V 250MA SC76-2 |
|
1N5818 TR TIN/LEADCentral Semiconductor |
DIODE SCHOTTKY 30V 1A DO41 |
|
CD214A-S1KJ.W. Miller / Bourns |
DIO RECT |
|
CDSW4148-GComchip Technology |
DIODE GEN PURP 75V 150MA SOD123 |
|
SR003 R0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 500MA DO204AL |
|
VS-70HF160Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.6KV 70A DO203AB |
|
RS2KAHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1.5A DO214AC |
|
LXA06B600Power Integrations |
DIODE GEN PURP 600V 6A TO263AB |
|
NHPD660T4GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 6A DPAK |
|
D8320N06TVFXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 600V 8320A |
|
C3D08065IWolfspeed - a Cree company |
DIODE SCHOTTKY 650V 8A TO220-2 |
|
VS-301URA80Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 330A DO205AB |
|
CMR1-06 BK PBFREECentral Semiconductor |
DIODE GEN PURP 600V 1A SMB |