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JAN1N5811US

JAN1N5811US

DIODE GEN PURP 150V 6A B-MELF

JAN1N5811US

JAN1N5811US

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Part No :

JAN1N5811US

Manufacturer
Roving Networks / Microchip Technology
Description
DIODE GEN PURP 150V 6A B-MELF
Catalog
Diodes - Rectifiers - Single
Availability
270627 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
JAN1N5811US PDF
Type Description
Series:Military, MIL-PRF-19500/477
Package:Bulk
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):150 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:5 µA @ 150 V
Capacitance @ Vr, F:60pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, B
Supplier Device Package:B, SQ-MELF
Operating Temperature - Junction:-65°C ~ 175°C
JAN1N5811US is available at GangBo-ic.com, Please review product page below for detailed information, including JAN1N5811US price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for JAN1N5811US to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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