DIODE SCHOTTKY 1.2KV 8A TO220-2
TAPE DBL COATED WHT 3"X 6" 25/PK
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 8A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.75 V @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 200 µA @ 1200 V |
Capacitance @ Vr, F: | 538pF @ 1V, 100kHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2L |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SR315HR0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 150V 3A DO201AD |
|
SK52C R7GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 5A DO214AB |
|
SBRT4U10LP-7Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 10V 4A U-DFN2020-2 |
|
V3F6-M3/HVishay General Semiconductor – Diodes Division |
3A,60V,SMF,TRENCH SKY RECT. |
|
VS-60APU04HN3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |
|
ES2FA M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 2A DO214AC |
|
NSVBAS116LT3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 75V 200MA SOT23-3 |
|
SBR3U40P1Q-7Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 40V 3A POWERDI123 |
|
1N4937-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
B340LA-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 3A SMA |
|
1N914TRSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
|
ACGRAT105L-HFComchip Technology |
DIODE GEN PURP 1KV 1A 2010 |
|
LS103B-GS18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 15A SOD80 |