DIODE GEN PURP 600V 1A SMB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
10BQ030TRSMC Diode Solutions |
DIODE SCHOTTKY 30V 1A SMB |
|
STTH1R06STMicroelectronics |
DIODE GEN PURP 600V 1A DO41 |
|
NTE125-100NTE Electronics, Inc. |
NTE125(100/PKG) |
|
RGL34GHE3/98Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 500MA DO213 |
|
VS-50WQ10FNTRR-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 5.5A DPAK |
|
S1M-E3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO214AC |
|
UPS3100E3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 100V 3A POWERMITE |
|
SS36LW RVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 3A SOD123W |
|
S5DL-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 200V 5A DO214AB |
|
MUR130GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 300V 1A AXIAL |
|
SBRT5A50SA-13Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 50V 5A SMA |
|
IDP18E120XKSA1IR (Infineon Technologies) |
DIODE GEN PURP 1.2KV 31A TO220-2 |
|
BYM07-150HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 500MA DO213 |