DIODE AVALANCHE 200V 1.7A TO277A
Type | Description |
---|---|
Series: | eSMP® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 1.7A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.9 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 200 V |
Capacitance @ Vr, F: | 72pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
SF62GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 6A DO201AD |
![]() |
ES1DTRSMC Diode Solutions |
DIODE GEN PURP 200V 1A SMA |
![]() |
BY228TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 1500V 3A SOD64 |
![]() |
CD214A-FS1JJ.W. Miller / Bourns |
DIO RECT |
![]() |
VB30100S-M3/8WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30A 100V TO-263AB |
![]() |
MBR745GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 45V 7.5A TO220-2 |
![]() |
RSFJLHRQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 500MA SUBSMA |
![]() |
S1M-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO214AC |
![]() |
VS-71HFR10Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 70A DO203AB |
![]() |
1N4448WS-G3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 75V 150MA SOD323 |
![]() |
RBR5L30ATE25ROHM Semiconductor |
DIODE SCHOTTKY 30V 5A PMDS |
![]() |
SE20PJ-M3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1.6A DO220AA |
![]() |
ES1BHR3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A DO214AC |