SIC DIODE TO220 650V
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 650 V |
Current - Average Rectified (Io): | 22.5A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 20 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 40 µA @ 650 V |
Capacitance @ Vr, F: | 866pF @ 1V, 100kHz |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
31DF4 A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO201AD |
|
VSSAF3L45HM3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 3A DO221AC |
|
VS-80APF06-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 80A TO247AC |
|
SK510B-LTPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 100V 5A DO214AA |
|
SDURF1540SMC Diode Solutions |
DIODE GEN PURP 400V 15A ITO220AC |
|
VS-1N1201AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 12A DO203AA |
|
ES3D V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AB |
|
STTH60RQ06-M2YSTMicroelectronics |
AUTOMOTIVE 600 V, 60 A ULTRAFAST |
|
MUH1PCHM3/89AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 1A MICROSMP |
|
RS3AB-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 50V 3A SMB |
|
CDBA540-HFComchip Technology |
DIODE SCHOTTKY 40V 5A DO214AC |
|
BAT42STMicroelectronics |
DIODE SCHOTTKY 30V 200MA DO35 |
|
SKL110Diotec Semiconductor |
SCHOTTKY SOD-123FL 100V 1A |