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ECQ-E6474JFW

ECQ-E6474JFW

CAP FILM 0.47UF 5% 630VDC RADIAL

IDB30E120ATMA1

IDB30E120ATMA1

DIODE GEN PURP 1.2KV 50A TO263-3

IRS21531DSTRPBF

IRS21531DSTRPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

IDB30E120ATMA1

IDB30E120ATMA1

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Part No :

IDB30E120ATMA1

Manufacturer
IR (Infineon Technologies)
Description
DIODE GEN PURP 1.2KV 50A TO263-3
Catalog
Diodes - Rectifiers - Single
Availability
10448 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 03 - Nov 07 2024
PDF
IDB30E120ATMA1 PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):50A (DC)
Voltage - Forward (Vf) (Max) @ If:2.15 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):243 ns
Current - Reverse Leakage @ Vr:100 µA @ 1200 V
Capacitance @ Vr, F:-
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:PG-TO263-3-2
Operating Temperature - Junction:-55°C ~ 150°C
IDB30E120ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IDB30E120ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IDB30E120ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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