SCHOTTKY BARRIER RECTIFIER, 30 V
Type | Description |
---|---|
Series: | SWITCHMODE™ |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 600 mV @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 200 µA @ 30 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RB168LAM150TFTRROHM Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
|
RB055L-60DDTE25ROHM Semiconductor |
DIODE SCHOTTKY 60V 3A PMDS |
|
NRVB120ESFT1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 20V 1A SOD123 |
|
CD1206-B2100J.W. Miller / Bourns |
DIODE SCHOTTKY 100V 2A 1206 |
|
JAN1N4454UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 50V 4A DO213AA |
|
SA158Diotec Semiconductor |
DIODE FR MELF 600V 1A |
|
SS210L RUGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 2A SUB SMA |
|
PMEG4010EGW115Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
RS3DHR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AB |
|
SF5406-TAPVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A SOD64 |
|
D6015LTPWickmann / Littelfuse |
DIODE GEN PURP 600V 9.5A TO220 |
|
SR505 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 5A DO201AD |
|
SS24/1Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 2A DO214AA |