RES SMD 634 OHM 0.1% 1/16W 0603
RES SMD 27.4 OHM 1% 1/10W 0603
DIODE GEN PURP 500V 3A DO214AA
RES SMD 0.1% 0.4W MELF
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 500 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 500 V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UH1BHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
|
1N5285Solid State Inc. |
FED .27 MA DO35 |
|
RSFDL RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 500MA SUBSMA |
|
SR802HA0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 8A DO201AD |
|
VIT3060G-E3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 15A TO262AA |
|
UF1J A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AL |
|
VS-30WQ03FN-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY DPAK |
|
HVM5Rectron USA |
DIODE GEN PURP 5000V 350MA HVM |
|
1N5195URRoving Networks / Microchip Technology |
DIODE GEN PURP 180V 200MA DO213 |
|
VS-12TQ045STRR-M3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 15A D2PAK |
|
VS-16FLR20S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 16A DO203AA |
|
ES15GLW RVGTSC (Taiwan Semiconductor) |
DIODE, SUPER FAST |
|
BYG10J-M3/TR3Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.5A |